| PART |
Description |
Maker |
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| RJK03N2DPA |
30V, 40A, 4.0m max Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 2SB920 2SB920L 2SD1236L |
80V/5A Switching Applications 80V/5A开关应
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| NTE19 NTE18 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | SIP
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | SIP
Silicon Complementary Transistors High Voltage, High Current Capacity Driver
|
NTE[NTE Electronics]
|
| GBL400 GBL404 GBL402 GBL401 GBL406 GBL408 |
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 800V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 600V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 100V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 200V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
Miniature single-phase silicon bridge rectifier. Max recurrent peak reverse voltage 400V. Max average forward rectified output current 4.0A(Tc=50degC), 3.0A(Tj=40degC).
IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)
Aluminum Polymer SMT Capacitor; Capacitance: 1000uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel
|
PANJIT[Pan Jit International Inc.]
PanJit International Inc.
|
| 2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 4A条一（c）| TO - 220AB现有
POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| Q6040M9 Q7040M9 Q4040M9 Q2040M9 Q8040M9 Q5040M9 Q2 |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|800V V(DRM)|40A I(T)RMS|TO-218
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 15A条口（T）的有效值|20
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|800V V(DRM)|25A I(T)RMS|TO-220
|
Motorola Mobility Holdings, Inc.
|
